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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 320Progress on the Numerical Calculation of...

Progress on the Numerical Calculation of Electrical Characteristics of Strained SiGe Channel P-MOSFET

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Abstract:

Recent progress in the computer simulation of strained SiGe channel p-MOSFET performance is reviewed. The electrical characteristics of strained SiGe channel p-MOSFET, such as threshold voltage, subthreshold characteristics, output characteristics, transconductance, quasistatic C-V characteristics and transfer characteristics, and the effects of Ge mole fraction on electrical characteristics, are well discussed. Finally, the development of strained SiGe channel p-MOSFET is prospected.

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Periodical:

Applied Mechanics and Materials (Volume 320)

Pages:

465-472

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.320.465

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Online since:

May 2013

Authors:

Jie Yu, Chong Wang, Yu Yang

Keywords:

Ge Mole Fraction, Output Characteristics, Strained SiGe Channel P-MOSFET, Subthreshold Characteristics, Threshold Voltage

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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