The Carrier Mobility Obtained by Admittance Spectroscopy Using an Equivalent Circuit

Abstract:

A single-carrier hole-only device of ITO/MoO₃/NPB/Al was used to measure the hole mobility of NPB layer, where NPB is a hole transport material. The hole mobility of NPB at different electric fields was obtained from the hole transit time (τ_dc) which was extracted from the negative differential susceptance (ΔB) as a function of frequency. To eliminate the impact of the contact resistance on the mobility measurement, an equivalent circuit model has been introduced to calculate the capacitance and the conductance of the NPB layer. By fitting the Nyquist plot of the impedance spectroscopy using the equivalent circuit, the contact resistance can be extracted from the impedance measurements. It is found that the mobility at low electric field is lower than what was reported in literature after the consideration of the contact resistance. It is also found that the calculated hole mobility of the NPB layer follows the Poole-Frenkels rule.

• Periodical: Applied Mechanics and Materials (Volume 320)
• Pages: 707-712
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.320.707
• Online since: May 2013
• Authors: Lei Ming Yu, De Ying Luo, Jun Jie Li, Jia Xiu Man, Zheng Hong Lu, Zhu Liu
• Keywords: Admittance Spectroscopy, Hole Mobility, NPB, Nyquist Plot, Single Carrier Device

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