Round Holes Pattern Design on Patterned Sapphire Substrate of GaN-Based LEDs

Xin Yu Yu; Jun Zhang; Zhe Chen; Meng Yuan Xie; Jian Hui Yu; Guang Hua Wang; Zheng Wen Tian; Te Li

doi:10.4028/www.scientific.net/AMM.321-324.474

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 321-324Round Holes Pattern Design on Patterned Sapphire...

Round Holes Pattern Design on Patterned Sapphire Substrate of GaN-Based LEDs

Abstract:

Patterned sapphire substrate (PSS) is effective approach to improve external quantum efficiency of light emitting diode (LED) chip. The round holes pattern was studied in this paper. Simulation was used to study how external quantum efficiency changes in different parameters of the round holes for flip GaN-based LEDs fabricated round holes PSS. Through a series of comparisons on simulation results, the maximum enhancement of LED’s external quantum efficiency is 15% compared to the external quantum efficiency of non-patterned sapphire substrate (non-PSS) LED for a most effective pattern.