Optical Performance Characteristics of Light-Emitting Diodes Designed with Dip-Shaped InGaN/GaN Quantum well Structures

Abstract:

A dip-shaped InGaN/GaN quantum well (QW) structure was computed to design efficient light-emitting diodes (LEDs). The advanced LEDs designed with the dip-shaped QW structures exhibited higher internal quantum efficiency by 26 % and the lower temperature-driven efficiency droop as compared to the reference LEDs. This could be due to the enhanced radiative recombination rate in the QW active region, which is associated with the reduced spatial separation of electron-hole wave functions.

• Periodical: Applied Mechanics and Materials (Volume 328)
• Pages: 845-849
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.328.845
• Online since: June 2013
• Authors: Seong Jun Kim, Chel Jong Choi, Hyun Soo Kim
• Keywords: Dip-Shaped, Efficiency Droop, Optical Characterization, Quantum Well, Simulation

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