Light Power Enhancement of Violet LEDs Using AlGaN-Based Epitaxial Structure

Abstract:

The growths of AlN and AlGaN materials were carried out in a home-built metal organic chemical vapor deposition (MOCVD) system. The AlN template was characterized by X-ray diffraction (XRD) and it showed the full width at half magnitude (FWHM) of the x-ray (002) scan rocking curve was only 28 arc seconds, while the FWHM of (102) plane was 252 arc seconds. The results suggested a high quality epitaxial material was obtained. Subsequently, an AlGaN-based violet LED was designed on this template by using AlGaN material as the base. The Al composition of electronic blocking layer (EBL) was optimized. By a quick on-wafer electroluminescence (EL) test, it was demonstrated that the output light intensity of the new structure was at least 15% stronger in comparison to that of the traditional GaN-based violet LED. Finally, fully packaged LEDs were fabricated and the luminous power of the new structure was measured by Spherical integrated system. It was confirmed that a 43% increase of the output power can be obtained.

• Periodical: Applied Mechanics and Materials (Volume 331)
• Pages: 572-577
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.331.572
• Online since: July 2013
• Authors: Jin Shun Yue, Ying Gao, Guo Hua Zhang, Yi Liu
• Keywords: AlGaN, LED, MOCVD, Violet

References

[1] S.Pimputkar, J. S.Speck, S. P.Denbaars, S. Nakamura. Nature Photonics, Vol. 3 (2009), p.180

[2] S. Nakamura, T. Mukai, M. Senoh. Appl. Phys. Lett. , Vol. 64 (1994), p.1687

[3] A. Dadgar, A. Alam, T. Riemann, J. Blaesing, A.Diez, M.Poschenrieder, et al. Physica Status Solidi (a) Vol. 188 (2001), p.155

[4] J. H. Wold, A. Valberg. Color Research & Application Vol. 26 (2001), p.222

[5] S.Tanabe, S.Fujita, S.Yoshihara, A.Sakamoto, S.Yamamoto. Proc. of SPIE.(2005),P. 5941

[6] Y.Taniyasu, M Kasu, T.Makimoto. Nature Vol. 441 (2006), p.325

[7] M.Mori, A.Hamamoto, A.Takahashi, M.Nakano, N.Wakikawa, S.Tachibana, et al. Medical & Biological Engineering & Computing Vol.45 (2007), p.1237

[8] Michael J. Cich, Rafael I. Aldaz, Arpan Chakraborty, et al. Appl. Phys. Lett., Vol. 101 (2012), p.223509

[9] Zhonghui, Li Zhijian Yang, Tongjun Yu, et al. SPIE Proceedings Vol. 5774 (2004), p.381

[10] M. Hansen, J. Piprek, P. M. Pattison , et al., Appl. Phys. Lett., Vol. 81 (2003), p.4275

[11] S. Nakamura, MRS Internet J. Nitride Semicond. , Vol. 2 (1997), p.5

[12] O.Makino, K.Nakamura, A.Tachibana, H.Tokunaga, N.Akutsu, K.Matsumoto. Appl. Surface Science Vol. 159 (2000), p.374

[13] C. F.Shih, N. C.Chen, S. Y.Lin, S. K.Liu. Appl. Phys. Lett., Vol. 86 (2005), p.211103

[14] I.H. Lee, T. G.Kim, Y.Park. J.Crystal Growth, Vol. 234 (2002), p.305

[15] I. Vurgaftman, J. R. Meyer. J. Appl. Phys., Vol. 94 (2003), p.33675