A Low Noise Amplifier with 1.1dB Noise Figure and +17dBm OIP3 for GPS RF Receivers
A 1.575GHz SiGe HBT(heterojunction bipolar transistor) low-noise-amplifier(LNA) optimized for Global Positioning System(GPS) L1-band applications was presented. The designed LNA employed a common-emitter topology with inductive emitter degeneration to simultaneously achieve low noise figure and input impedance matching. A resistor-bias-feed circuit with a feedback resistor was designed for the LNA input transistor to improve the gain compression and linearity performance. The LNA was fabricated in a commercial 0.18µm SiGe BiCMOS process. The LNA achieves a noise figure of 1.1dB, a power gain of 19dB, a input 1dB compression point(P1dB) of -13dBm and a output third-order intercept point(OIP3) of +17dBm at a current consumption of 3.6mA from a 2.8V supply.
Prasad Yarlagadda and Yun-Hae Kim
Y. Xiang et al., "A Low Noise Amplifier with 1.1dB Noise Figure and +17dBm OIP3 for GPS RF Receivers", Applied Mechanics and Materials, Vols. 336-338, pp. 1490-1495, 2013