A Low Noise Amplifier with 1.1dB Noise Figure and +17dBm OIP3 for GPS RF Receivers

Abstract:

A 1.575GHz SiGe HBT(heterojunction bipolar transistor) low-noise-amplifier(LNA) optimized for Global Positioning System(GPS) L1-band applications was presented. The designed LNA employed a common-emitter topology with inductive emitter degeneration to simultaneously achieve low noise figure and input impedance matching. A resistor-bias-feed circuit with a feedback resistor was designed for the LNA input transistor to improve the gain compression and linearity performance. The LNA was fabricated in a commercial 0.18µm SiGe BiCMOS process. The LNA achieves a noise figure of 1.1dB, a power gain of 19dB, a input 1dB compression point(P1dB) of -13dBm and a output third-order intercept point(OIP3) of +17dBm at a current consumption of 3.6mA from a 2.8V supply.

• Periodical: Applied Mechanics and Materials (Volumes 336-338)
• Pages: 1490-1495
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.336-338.1490
• Online since: July 2013
• Authors: Yong Xiang, Yan Bin Luo, Ren Jie Zhou, Cheng Yan Ma
• Keywords: Global Positioning System (GPS), Low-Noise-Amplifier (LNA), Noise Figure (NF), Output Third-Order Intercept Point (OIP3), SiGe

References

[1] W. T. Han, Y. Qi, S. Ye: submitted to Journal of Electronic Science and Technology of China (2009).

[2] A. Agarwal , G. S. Chandel, A. Biswas: 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Vol. 3 (2004), pp.179-182.

DOI: 10.1109/smic.2004.1398145

[3] B. Bokinge, W. Einerman: Proceedings of Asia-Pacific Microwave Conference, Vol. 5 (2006), pp.320-323.

[4] X. P. HOU, Y. F. ZHAO, Wei-Min LI: 5th International Conference on MEMS NANO and Smart Systems, Vol. 2 (2009), pp.93-96.

[5] E. Taniguchi, T. Ikushima: submitted to IEEE Transactions on Microwave Theory and Techniques(2003).

[6] J. C. H. Poh, P. Cheng, T. K. Thrivikraman, J. D. Cressler: Proceedings of the 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Germany, Vol. 1 (2010), pp.69-72.

DOI: 10.1109/smic.2010.5422953

[7] Q. Q. Liang, G. F. Niu, J. D. Cressler: IEEE Radio Frequency Integrated Circuits Symposium. Microwave, Vol. 6 (2002), pp.407-410.

[8] Ping-Xi MA, R. Marco, Jie Zheng, K. Marion: submitted to IEEE Transactions on Microwave Theory and Techniques(2003).

[9] B. W. Min, G. M. Rebeiz: submitted to IEEE Microwave and Wireless Components Letters (2007).

[10] C. P. Moreira, E. Kerherve, P. Jarry: Proceedings of the IEEE MTT-S International Conference. Microwave, Vol. 3 (2005), pp.32-37.

[11] C. H. Lin , Y. K. Su, Y. Z. Juang : submitted to IEEE Transactions on Microwave Theory and Techniques(2004).

[12] P. Sivonen, S. Kangasmaa, A. Pärssinen: submitted to IEEE Transactions on Microwave Theory and Techniques(2003).