A Novel 4-bit 10Gsps ADC in 180nm SiGe Bicmos Process

Rong Bin Hu; Xiang Cai

doi:10.4028/www.scientific.net/AMM.336-338.1500

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 336-338A Novel 4-bit 10Gsps ADC in 180nm SiGe Bicmos...

A Novel 4-bit 10Gsps ADC in 180nm SiGe Bicmos Process

Abstract:

In this paper, a novel 4-bit ADC is presented. The ADC adopts interpolated flash architecture with eight preamplifiers followed by fifteen latches. The ECL technique is used in the design of the ADC. Because of the novel design techniques adopted in the ADC, the conversion rate is very fast, up to 10Gsps, which has been proved by the stimulation results.

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Periodical:

Applied Mechanics and Materials (Volumes 336-338)

Pages:

1500-1503

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.336-338.1500

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Online since:

July 2013

Authors:

Rong Bin Hu, Xiang Cai

Keywords:

ADC, Bias, Comparator, DAC, Interpolate

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References

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