Simulation of Graded Band-Gap PIN nc-Si Thin-Film Solar Cells

Ming Kun Xu

doi:10.4028/www.scientific.net/AMM.345.197

Paper Titles

Surface Chemical Modification and Characterization of Nano Fe₂O₃
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Research on the Concrete Performance in the Marine Environment
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Synthesis, Characterization, and Photoluminescence of a Novel Eu-Containing Polymer Precursor: {Tris(acetylacetonate)5-acrylamido-1,10-phenanthroline}Europium(III)
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Array of Fe₃O₄Nanoparticles in PS-b-P2VP thin Films
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Simulation of Graded Band-Gap PIN nc-Si Thin-Film Solar Cells
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Preparation of Mesoporous Magnetic TiO₂/CoFe₂O₄ Photocatalysts Using Ionic Liquid as Template Agent
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Effect of the Pore Fractal Dimensions on Absorption Ability in Superabsorbent Fibers
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Microstructural Evolution and hardening of Subsurface of Mg-3Al-1Zn Alloy during Dry Sliding Wear
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Experimental Investigation of Low Velocity Impact and Residual Compressive Properties of Composite Laminates Based on AE
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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 345Simulation of Graded Band-Gap PIN nc-Si Thin-Film...

Simulation of Graded Band-Gap PIN nc-Si Thin-Film Solar Cells

Abstract:

Using AMPS-1D program package, graded band-gap PIN nc-Si Thin-film Solar Cells is simulated. The results show that the graded band gap of intrinsic layer not only enhances the absorption of sunlight but also promote the collection of the photo-generated carriers. The increasing graded band gap PIN nc-Si thin-film solar cells with high efficiency of 14.743% and fill factor of 0.775 is superior to general solar cells designed in our previous work.