Determination of B Impurities in Silicon by Inductively Coupled Plasma Emission Spectrometry

Yao Liu; Yi Tan; Lei Zhang; Xin Ye Liu; Ya Qiong Li; Jia Yan Li

doi:10.4028/www.scientific.net/AMM.365-366.1035

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 365-366Determination of B Impurities in Silicon by...

Determination of B Impurities in Silicon by Inductively Coupled Plasma Emission Spectrometry

Abstract:

This article provides a method to determinate boron (B) impurity in silicon by inductively coupled plasma emission spectrometry (ICP-AES), in which the element spectral and analytical parameters were optimized. Three factors that influence testing results were discussed, including the amount of mannitol (C6H14O6) addition, concentration of nitric acid (HNO3) and evaporated temperature. As a result, the experimental parameters and conditions were optimized. The method of the detection limit, recovery and precision were all awarded with satisfactory results.

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Periodical:

Applied Mechanics and Materials (Volumes 365-366)

Pages:

1035-1039

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.365-366.1035

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Online since:

August 2013

Authors:

Yao Liu, Yi Tan, Lei Zhang, Xin Ye Liu, Ya Qiong Li, Jia Yan Li

Keywords:

B Impurity, ICP-AES, Silicon

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