Growth of CuInGaSe2 Films by RF Sputtering Using CuInGaSe2 Single Phase Target

Kenji Yoshino; Takahiro Tokuda; Akira Nagaoka; Kenichiro Miseki; Rie Mori; Shou Bin Zhang; Shigeo Doutyoku

doi:10.4028/www.scientific.net/AMM.372.571

Paper Titles

Photovoltaic Systems in University of Miyazaki
p.555

Heat Release Effect of Thermal Emission Coating on Concentrator Photovoltaic Module
p.559

Crystal Quality Improvement of CuInS₂ Thin Film by Two Step Fabrication Method with Bismuth Addition
p.563

Zn (O,S):Al Films Prepared by Radio Frequency Magnetron Sputtering for Transparent Electrode
p.567

Growth of CuInGaSe₂ Films by RF Sputtering Using CuInGaSe₂ Single Phase Target
p.571

Effect of Anti-Soiling Coating on Performance of Fresnel Lens for Concentrator Photovoltaic Module
p.575

Effect of Film Thickness on the Structure and Electrical Properties of CuInSe₂ Thin Films
p.579

Minimization of Open Circuit Voltage Fluctuation of Quantum Dot Based Solar Cell Using InN
p.586

Design, Fabrication and Performance Analysis of Single Basin Solar Stills
p.590

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 372Growth of CuInGaSe2 Films by RF Sputtering Using...

Growth of CuInGaSe₂ Films by RF Sputtering Using CuInGaSe₂ Single Phase Target

Abstract:

CuIn_0.8Ga_0.2Se₂ thin film is grown at room temperature by RF sputtering using high quality of CuIn_0.8Ga_0.2Se₂ single phase target. A (112) diffraction peak is dominant with no secondary phases such as selenide materials in the X-ray diffraction pattern. A flat and homogeneous surface can be obtained in the sample.

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Applied Mechanics and Materials (Volume 372)

Pages:

571-574

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.372.571

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Online since:

August 2013

Authors:

Kenji Yoshino, Takahiro Tokuda, Akira Nagaoka, Kenichiro Miseki, Rie Mori, Shou Bin Zhang, Shigeo Doutyoku

Keywords:

CIGS, Solar Cell, Sputter

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References

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