Effect of Film Thickness on the Structure and Electrical Properties of CuInSe₂ Thin Films

Abstract:

CuInSe₂ thin films were prepared under vacuum by conventional evaporation method .The films were deposited at different film thickness (188-577nm) .XRD of as-prepared powder indicated that CuInSe₂ has tetragonal poly crystalline structure with(122) preferred orientation, while XRD of the as-deposited films were of a mixed amorphous- microcrystalline nature. The variation of the calculated lattice parameters at different film thickness were showed. The electrical properties of CuInSe₂ thin films were studied at different film thickness. The dark conductivity of the films was measured as a function of temperature. Two regions were obtained corresponding to two activation energy. The activation energy decreases with increasing the film thickness.

• Periodical: Applied Mechanics and Materials (Volume 372)
• Pages: 579-585
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.372.579
• Online since: August 2013
• Authors: Abdalrhman Salem Alageli, Mohamed Ibrahim Elsamahi
• Keywords: Electrical Properties, Semiconductor, Solar Cell, Structure, Thickness Effect, Thin Film

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