Zn (O,S):Al Films Prepared by Radio Frequency Magnetron Sputtering for Transparent Electrode

Jasmeen Julayhi; Takashi Minemoto

doi:10.4028/www.scientific.net/AMM.372.567

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 372Zn (O,S):Al Films Prepared by Radio Frequency...

Zn (O,S):Al Films Prepared by Radio Frequency Magnetron Sputtering for Transparent Electrode

Abstract:

Zn (O,S):Al (AZOS) has been proposed as a new type of transparent conductive oxide (TCO) with adjustable band gap energy (E_g) and conduction band position. The novel materials of AZOS with S/(S+O) ratio of 0.00~0.85 were prepared by radio frequency magnetron co-sputtering of ZnO:Al and ZnS targets. The optical properties of the films showed high transmittance of almost over 80% and E_g change with the S/(S+O) ratio. The suitable resistivity for TCO of around 10^-3Ωcm was obtained at the S/(S+O) ratio of 0.00~0.09, but as the S/(S+O) ratio exceeded 0.40, the resistance increased greatly.

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Applied Mechanics and Materials (Volume 372)

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567-570

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https://doi.org/10.4028/www.scientific.net/AMM.372.567

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Online since:

August 2013

Authors:

Jasmeen Julayhi, Takashi Minemoto

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Solar Cell, Sputtering, Thin Film, Transparent Conductive Oxide, ZNO

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