Carbon Nanotubes: Good Candidate for VLSI Interconnects

Article Preview

Abstract:

Carbon nanotubes are being seen as a promising new class of electronic materials owing to the change in their properties with chirality and geometry of the nanotube. They are being considered for future VLSI applications due to their superior conductance and inductance properties which are important parameters while considering any material for an interconnect or via applications.In this paper, we report the variation in electrical and thermal conductance as well as inductance of a CNT with its geometrical features using a diameter dependent model. Also the dependence of conductance and inductance of a CNT on the type of nanotubes, tube length and tube diameter has been studied. As we know that at nanometre scale, the electrical and thermal transport properties of the components become extremely important as regards the functioning of the device and it is difficult to accurately measure these properties, therefore predictions using modeling and simulation play an important role in providing a guideline for design and fabrication of CNT interconnects and understanding the working of various other CNT based devices.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

165-171

Citation:

Online since:

August 2013

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2013 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] A. Raychowdhury and K. Roy, IEEE Trans. TCAD, vol. 25, no. 1, p.5865, Jan. (2006).

Google Scholar

[2] Avouris, P.; Wind, S.J.; Carbon nanotube electronics, IEEE proc., volume 91, 1772-1784, (2003).

Google Scholar

[3] Brown, E.; Hao, L. ; Gallop, J.C.; Macfarlane, J.C.; Appl. Phys. Lett., 87, 023107, (2005).

Google Scholar

[4] C. L. Cheung, A. Kurtz, H. Park and C. M. Lieber,. J. Phys. Chem. volume 106, 2429-2433, (2002).

Google Scholar

[5] Cao, J.; Yan, X.; Xiao, Y.; Ding, J.; Phys. Rev. B, 69, 073407, (2004).

Google Scholar

[6] H. J. Li, W. G. Lu, J. J. Li, X. D. Bai and C. Z. Gu, Phys. Rev. Lett. Vol. 95, no. 8, p.86601, Aug. (2005).

Google Scholar

[7] Iijima, S.; Nature, 354, 56, (1991).

Google Scholar

[8] J. Li, Q. Ye, A. Casssell, H. T. Ng, R. Stevens, J. Han and M. Meyyappan, APL vol. 82, pp.2491-2493, Apr. (2003).

Google Scholar

[9] J X Cao, X H Yan, J W Ding and D L Wang, J. Phys.: Condens. Matter 13, L271–L275, (2001).

Google Scholar

[10] Miano, G.; Villone, F., IEEE trans., volume 54, 2713-2724, (2006).

Google Scholar

[11] Mintmire J W and White C T, Phys. Rev. Lett. 81 2506, (1998).

Google Scholar

[12] Naeemi, A. ; Meindl; Sarvari, R., J.D.; IEEE Elec. Dev. Lett., volume 26, pp.84-86, (2005).

Google Scholar

[13] Naeemi, A.; Meindl, J.D.; Compact physical models for CNT interconnects. IEEE Elec. Dev. Lett., vol. 27, 338-340, (2006).

Google Scholar

[14] Neeraj Jain; Harsh; Nanoscience and Nanotechnology, volume 2, Issue 2-3, (2008).

Google Scholar

[15] Neeraj Jain; Harsh; R K Sinha; J. Advanced Materials Research, volume 67 titled Nanomaterials & Devices, 109-114, (2009).

Google Scholar

[16] S. Salahuddin, M. Lundstrom and S. Datta, IEEE Trans. Electron Devices, vol. 52, no. 8, pp.1734-1742, Aug. (2005).

DOI: 10.1109/ted.2005.852170

Google Scholar

[17] S. Sato; et. Al; Inter. Interconnect Tech. Conf. 230-232, June (2006).

Google Scholar

[18] Saito, R.; Dresselhaus, G.; Dresselhaus, M.S.; Physical Properties of Carbon Nanotubes; Imperial College Press, (1998).

Google Scholar

[19] Sansiri Haruehanroengra and Wei Wang*, Electron Device Letters, IEEE, Volume 28, Issue 8, 756 – 759, Aug. (2007).

Google Scholar

[20] Wei Wang, Sansiri Haruehanroengra, Liwei Shang, and Ming Liu as, Inductance of Mixed Carbon Nanotube Bundles.

Google Scholar