Research on Thermal Resistance of Power MOSFET Based on the Structure Function

Xiao Chao; Li Xin Wang

doi:10.4028/www.scientific.net/AMM.380-384.3388

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 380-384Research on Thermal Resistance of Power MOSFET...

Research on Thermal Resistance of Power MOSFET Based on the Structure Function

Abstract:

The research of thermal resistance, an important parameter for the thermal characterization of Power MOSFET device, is gaining increasing importance. Structure function, a novel and popular method, can be used to analyse the thermal characterization of Power MOSFET. In this paper, Wiener filter, a frequency-domain method of performing deconvolution that produces the structure function, is proposed. This method is applied to a Power MOSFET device in a TO-39 package. The thermal resistance of this Power MOSFET device was analysed from the structure function based on Wiener filter method.

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Periodical:

Applied Mechanics and Materials (Volumes 380-384)

Pages:

3388-3391

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.380-384.3388

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Online since:

August 2013

Authors:

Xiao Chao, Li Xin Wang

Keywords:

Deconvolution, Power MOSFET, Structure Function, Thermal Resistance

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