Electrical Characteristics of Pt Schottky Contact to Semipolar (11-22) n-GaN Depending on Si Doping Concentration

Abstract:

Electrical characteristics of Pt Schottky contact formed on semipolar (11-22) n-type GaN planes with different Si doping concentration were investigated. Large Si doping to semipolar (11-22) n-GaN led to improved electrical and structural properties, e.g., the Hall mobility (μ) was increased by 35 % and the full width at half maximum (FWHM) of X-ray rocking curves with X-ray incident beam direction of [-1-12 was decreased by 34 %. Thermionic field emission (TFE) theory applied to the forward current-voltage (I-V) curves of fabricated Pt Schottky diodes yielded the Schottky barrier height (Φ_B) of 1.64 and 1.84 eV, the tunneling parameter (E₀₀) of 44 and 65 meV, and the ideality factor (n) of 1.83 and 2.57 for the lowly doped and highly doped samples, respectively, indicating that the Si doping affected the carrier transport properties substantially associated with the change of surface states density.

• Periodical: Applied Mechanics and Materials (Volume 404)
• Pages: 146-151
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.404.146
• Online since: September 2013
• Authors: Sung Min Jung, Kyoung Kook Kim, Sung Nam Lee, Hyun Soo Kim
• Keywords: Carrier Transport, Schottky Diode, Semipolar N-GaN, Si Doping

References

[1] H. M. Ng: Appl. Phys. Lett. Vol. 80 (2002), p.4369.

[2] M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars: Appl. Phys. Lett. Vol. 81 (2002), p.1201.

[3] C. Chen, V. Adivarahan, J. Yang, M. Shatalov, E. Kuokstis, and M. Asif Khan: Jpn. J. Appl. Phys. Vol. 42 (2003), p. L1039.

DOI: 10.1143/jjap.42.l1039

[4] J. -H. Ryou, P. D. Yoder, J. P. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis: IEEE J. Select. Topic. Quantum Electron. Vol. 15 (2009), p.1080.

DOI: 10.1109/jstqe.2009.2014170

[5] M. Kuroda, T. Ueda, and T. Tanaka, IEEE Trans. Electron. Devices, Vol. 57 (2010), p.368.

[6] Y. Kawakami, K. Nishizuka, D. Yamada, A. Kaneta, M. Funato, Y. Narukawa, and T. Mukai: Appl. Phys. Lett. Vol. 90 (2007), p.261912.

DOI: 10.1063/1.2748309

[7] S. -N. Lee, J. Kim, and H. Kim: J. Ceram. Process Res. Vol. 13 (2012), p. s251.

[8] S. -H. Han, K. -R. Song, J. -H. Lee, and S. -N. Lee: Curr. Appl. Phys. (on-line published; http: /dx. doi. org/10. 1016/j. cap. 2013. 01. 007).

[9] B. P. Luther, S. E. Mohney, T. N. Jackson, M. Asif Khan, Q. Chen, and J. W. Yang: Appl. Phys. Lett. Vol. 70 (1997), p.57.

[10] H. Kim, S. -N. Lee, Y. Park, J. S. Kwak, and T. -Y. Seong: Appl. Phys. Lett. Vol. 93 (2008), p.032105.

[11] S. Jung, S. -N. Lee, K. -S. Ahn, and H. Kim: Jpn. J. Appl. Phys. Vol. 51 (2012), p.061001.

[12] F. A. Padovani and R. Stratton: Solid-State Electron. Vol. 9 (1966), p.695.

[13] E. H. Rhoderick: IEE Proc. Vol. 129 (1982), p.1.

[14] L. S. Yu, Q. Z. Liu, Q. J. Xing, D. J. Qiao, S. S. Lau, and J. Redwing: J. Appl. Phys. Vol. 84 (1998), p. (2099).

[15] A. E. Belyaev, N. S. Boltovets, V. N. Ivanov, V. P. Klad'ko, R. V. Konakova, Ya. Ya. Kudrik, A. V. Kuchuk, V. V. Milenin, Y. N. Sveshnikov, and V. N. Sheremet: Semiconductors Vol. 42 (2008), p.689.

DOI: 10.1134/s1063782608060092

[16] S. M. Sze: Physics of Semiconductor Devices (Wiley, New York, 1981).

[17] S. Jung, S. -N. Lee, and H. Kim, Appl. Phys. Lett. Vol. 102 (2013), p.151603.