Precise Electrical Characterization of LEDs with Wide-Band Material

Yang Li; Lie Feng Feng; Cun Da Wang; Qiong Yong Xing

doi:10.4028/www.scientific.net/AMM.411-414.1654

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 411-414Precise Electrical Characterization of LEDs with...

Precise Electrical Characterization of LEDs with Wide-Band Material

Abstract:

The accurate electrical properties of semiconductor GaN based blue Light-Emitting Diodes (LED) with Multiple-Quantum Well (MQW) structure and GaAsP based red LED, were measured by single Capacitance-Voltage (C-V) method and single Current-Voltage (I-V) method at large forward bias. After comparing the experimental results, we found that the apparent capacitance C_p of GaN based blue LED and GaAsP based red LED measured by C-V method display obviously negative value at large forward bias and low frequency, which is in conflict with the well known Shockley's p-n junction theory and model. Besides, the precise Characterization of apparent capacitance C_p and apparent conductance G_p is obtained.

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Applied Mechanics and Materials (Volumes 411-414)

Pages:

1654-1659

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.411-414.1654

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Online since:

September 2013

Authors:

Yang Li, Lie Feng Feng, Cun Da Wang, Qiong Yong Xing

Keywords:

AC Small Signal, Conductance, Light Emitting Diode (LED), Negative Capacitance (NC)

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