Spontaneous Radiation Energy of Current Filaments in GaAs Photoconductive Semiconductor Switches

Abstract:

The spontaneous radiation energy of the current filaments in high gain GaAs photoconductive semiconductor switches (PCSS) is quantificationally analyzed. The spontaneous radiation formula of the current filaments was derived. The concept of the distribution function of the radiation intensity dependent on radiation wavelength was first introduced in GaAs samples. The radiative recombination coefficients of four peak wavelengths were estimated by the statistical-physical method in high gain GaAs PCSS. Calculated according to the radiative recombination coefficient of 890 nm radiation, the spontaneous radiation energies are consistent with the experimental observations. This explains the observations about optical output energy versus filament current.

• Periodical: Applied Mechanics and Materials (Volumes 423-426)
• Pages: 2659-2662
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.423-426.2659
• Online since: September 2013
• Authors: Hong Liu, Li Zheng, Hong Jun Yang, Wei Yang, Yong Lin Zheng
• Keywords: Current Filament, GaAs Photoconductive Semiconductor Switch (PCSS), Optoelectronics, Radiative Recombination Coefficient, Spontaneous Radiation

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