Molecular Dynamics Simulations of the Effect of Carbon Concentration on Silicon Carbide Crystal Growth

Qiu Fa Hu; Nai Gen Zhou; Tao Hong; Lan Luo; Ke Li; Lang Zhou

doi:10.4028/www.scientific.net/AMM.423-426.597

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 423-426Molecular Dynamics Simulations of the Effect of...

Molecular Dynamics Simulations of the Effect of Carbon Concentration on Silicon Carbide Crystal Growth

Abstract:

The effect of carbon concentration on SiC crystal growth from melt at 2900 K has been investigated by molecular dynamics simulations. The inter-atomic forces are calculated by MEAM potential. Atomic layer density showed that, with the carbon concentration increasing in the range of 1%-70%, the SiC crystal growth rate increased first as the c concentration less than 45%, and then decreased as the c concentration more than 50%. The number of defected atoms showed that the SiC crystal growth rate had exponent relation to the C concentration both during increasing and decreasing process.

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Periodical:

Applied Mechanics and Materials (Volumes 423-426)

Pages:

597-601

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.423-426.597

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Online since:

September 2013

Authors:

Qiu Fa Hu, Nai Gen Zhou, Tao Hong, Lan Luo, Ke Li, Lang Zhou

Keywords:

C Concentration, Crystal Growth, Melt, Molecular Dynamic (MD), Silicon Carbide (SiC)

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