Quantum State in Solid-Phase Crystallization of a-Si:H by FA
Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by conventional furnace annealing (FA) at different temperatures. From the Raman spectra and scanning electronic microscope (SEM), it is found that the thin film grain size present quantum states with annealing temperature.
R. M. Jin et al., "Quantum State in Solid-Phase Crystallization of a-Si:H by FA", Applied Mechanics and Materials, Vols. 44-47, pp. 4154-4156, 2011