Quantum State in Solid-Phase Crystallization of a-Si:H by FA

Abstract:

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Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by conventional furnace annealing (FA) at different temperatures. From the Raman spectra and scanning electronic microscope (SEM), it is found that the thin film grain size present quantum states with annealing temperature.

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Periodical:

Edited by:

Ran Chen

Pages:

4154-4156

DOI:

10.4028/www.scientific.net/AMM.44-47.4154

Citation:

R. M. Jin et al., "Quantum State in Solid-Phase Crystallization of a-Si:H by FA", Applied Mechanics and Materials, Vols. 44-47, pp. 4154-4156, 2011

Online since:

December 2010

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$35.00

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