Quantum State in Solid-Phase Crystallization of a-Si:H by FA

Rui Min Jin; Ding Zhen Li; Lan Li Chen; Xiang Ju Han; Jing Xiao Lu

doi:10.4028/www.scientific.net/AMM.44-47.4154

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 44-47Quantum State in Solid-Phase Crystallization of...

Quantum State in Solid-Phase Crystallization of a-Si:H by FA

Abstract:

Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by conventional furnace annealing (FA) at different temperatures. From the Raman spectra and scanning electronic microscope (SEM), it is found that the thin film grain size present quantum states with annealing temperature.

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Applied Mechanics and Materials (Volumes 44-47)

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4154-4156

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.44-47.4154

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Online since:

December 2010

Authors:

Rui Min Jin, Ding Zhen Li, Lan Li Chen, Xiang Ju Han, Jing Xiao Lu

Keywords:

a-Si: H Film, Furnace Annealing, Grain Size, PECVD

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