Solid-Phase Crystallization of a-Si:H by RTA

Rui Min Jin; Ding Zhen Li; Lan Li Chen; Xiang Ju Han; Jing Xiao Lu

doi:10.4028/www.scientific.net/AMM.44-47.4151

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 44-47Solid-Phase Crystallization of a-Si:H by RTA

Solid-Phase Crystallization of a-Si:H by RTA

Abstract:

Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by rapid thermal annealing (RTA) at the same temperature for different time. From X-ray diffraction (XRD) and scanning electronic microscope (SEM), it is found that the grain size is biggest crystallized at 720°C for 8 min, an average grain size of 28nm or so is obtained. The thin film is smoothly and perfect structure.

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Applied Mechanics and Materials (Volumes 44-47)

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4151-4153

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.44-47.4151

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Online since:

December 2010

Authors:

Rui Min Jin, Ding Zhen Li, Lan Li Chen, Xiang Ju Han, Jing Xiao Lu

Keywords:

a-Si: H Film, PECVD, Rapid Thermal Annealing (RTA)

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