Solid-Phase Crystallization of a-Si:H by RTA

Abstract:

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Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by rapid thermal annealing (RTA) at the same temperature for different time. From X-ray diffraction (XRD) and scanning electronic microscope (SEM), it is found that the grain size is biggest crystallized at 720°C for 8 min, an average grain size of 28nm or so is obtained. The thin film is smoothly and perfect structure.

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Periodical:

Edited by:

Ran Chen

Pages:

4151-4153

DOI:

10.4028/www.scientific.net/AMM.44-47.4151

Citation:

R. M. Jin et al., "Solid-Phase Crystallization of a-Si:H by RTA", Applied Mechanics and Materials, Vols. 44-47, pp. 4151-4153, 2011

Online since:

December 2010

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$35.00

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