Simulations and Analysis of the Moving Mask UV Lithography for Thick-Photoresist

Abstract:

A three-dimensional (3D) simulation system is developed for the moving mask UV lithography of thick photoresist. The exposure simulation model is obtained with consideration of the mask moving function, the refraction and energy loss of the UV light at the surface of photoresist, and the reflection at the photoresist/substrate interface. The development model is calculated by the fast marching method. In addition, the energy deposition distributions and the three-dimensional development profiles are presented under different conditions to study the effect of various parameters and to verify the accuracy by experiment. The results will be useful to understand the effects and to control the exposure conditions in the design process of moving mask UV lithography for thick-photoresist in the future.

• Periodical: Applied Mechanics and Materials (Volume 455)
• Pages: 88-93
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.455.88
• Online since: November 2013
• Authors: Qian Yu, Zai Fa Zhou, Heng Zhang
• Keywords: 3D Simulation, Moving Mask Lithography, Thick-Photoresist, UV Lithography

References

[1] Tabata O, Terasoma K, Agawa N and Yamamoto K. Moving mask LIGA (M2LIGA) process for control of sidewall inclination Proc. 12th Int. Conf. on Micro Electro Mechanical Systems (MEMS1999) , p.252.

DOI: 10.1109/memsys.1999.746826

[2] Sugiyama S, Khumpuang S and Kawaguchi G. Plain-pattern to cross-section transfer (PCT) technique for deep x-ray lithography and applications J. Micromech. Microeng. 14 1399–404. (2004).

DOI: 10.1088/0960-1317/14/10/015

[3] Matsuzuka N, Hirai Y and Tabata O. A novel fabrication process of 3-D microstructures by double exposure in deep x-ray lithography (D2XRL) J. Micromech. Microeng. 15 2056–62. (2005).

DOI: 10.1088/0960-1317/15/11/009

[4] Hirai Y, Sugano K, Tsuchiya T and Tabata O. A three-dimensional microstructuring technique exploiting the positive photoresist property Moving mask UV lithography for three-dimensional structuring J. Micromech. Microeng. 20 065005, (2010).

DOI: 10.1088/0960-1317/20/6/065005

[5] Lilli Shi. Study on the Fast Marching Method in MEMS Process Simulation. A Dissertation（Thesis）Submitted toSoutheast UniversityFor the Academic Degree of Master ofEngineering, 2012( in Chinese).

[6] Henderson C L, Scheer S A, Tsiartas P C, Rathsack B M, Sagan J P, Dammel R R, Erdmann A and Willson C G. Modeling parameter extraction for DNQ-novolak thick film resists Proc. SPIE 3333 256–67, (1998).

DOI: 10.1117/12.312415

[7] Born M. Wolf E. Principles of optics. Beijing: Electronics Industry Press. 2005(in Chinese).

[8] Zhen Zhu. Simulation of SU-8 photoresist Lithography. A Dissertation Submitted to Southeast University For the Academic Degree of Master of Engineering, 2008(in Chinese).

[9] Gaudet M, Camart J C, Buchaillot L, et al. Variation of absorption coefficient and determination of critical dose of SU-8 at 365 nm. [J] Applied Physics Letters, 2006, 88: 024107.

DOI: 10.1063/1.2164390

[10] Kang W. J, Rabe E, Kopetz S, et al. Novel exposure methods based on reflection and refraction effects in the field of SU-8 lithography[J]. J. MicromechMicroeng, 2006, 16: 821.

DOI: 10.1088/0960-1317/16/4/020