Ultra Broadband Power Amplifier Based on GaN HEMT

Abstract:

An Ultra broadband power amplifier module based on GaN HEMT is studied. TGF2023-02 Chip of GaN HEMT from TriQuint Corporation is adopted and modeled first. The amplifier is designed with negative feedback technique. DC bias circuits and microstrip matching circuits are simulated and optimized carefully. Simulation results show that the amplifier module has a wide range frequency response from 3 to 8 GHz. It exhibits power gain of 7.6 dB, an output power of 37.5dBm under DC bias of V_ds = 28 V, V_gs = -3.6 V at the frequency of 5.5 GHz.

• Periodical: Applied Mechanics and Materials (Volumes 475-476)
• Pages: 1685-1688
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.475-476.1685
• Online since: December 2013
• Authors: Zhi Qun Cheng, Min Shi Jia, Xin Xiang Lian, Ya Luan
• Keywords: Broadband, Gan HEMT, Modeling, Power Amplifier

References

[1] W.J. Luo, X.J. Chen, L. Pang, T.T. Yuan and X.Y. Liu: Microelectronics Journal Vol. 43 (2012), p.569.

[2] D. Liu, L. Wang, X. J. Chen. Microwave and Millimeter Wave Circuits and System Technology: 2012, p.1.

[3] C. Chen, Y. Hao, H. Feng, W.P. Gu, Z.M. Li, S.G. Hu, T. Ma. Journal of Semiconductors Vol. 31 (2010).

[4] Information on http: /www. triquint. com/products/p/TGF2023-02.

[5] Z.Q. Cheng, L.W. Jin, W. Shi. Applied Mechanics and Materials, 2012, vol. 263-266, n PART 1, p.39.

[6] S. Kophon, P. Uthansakul, M. Uthansakul, S. Cheedket. International Conference on Communication Engineering and Networks, 2011, vol. 19, p.62.