The Study and Fabrication of Electron Field Emission Module for Next-Generation Multi-Beams Lithography Applications

Wen Shih Lin; Tao Hsing Chen; Tsung Chieh Cheng

doi:10.4028/www.scientific.net/AMM.479-480.264

Paper Titles

Dynamic Response of a Viscoelastic Damping Isolator under High Cyclic Loading
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Finite Element Analysis of Bridge-Vehicle System with Randomness
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Design of Geneva Mechanism with Curved Slots
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The Study and Fabrication of Electron Field Emission Module for Next-Generation Multi-Beams Lithography Applications
p.264

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The Design of Heat Pipe Heat Exchanger for CO₂ EGS
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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 479-480The Study and Fabrication of Electron Field...

The Study and Fabrication of Electron Field Emission Module for Next-Generation Multi-Beams Lithography Applications

Abstract:

In this paper, a single silicon nanoemitter were investigated by means of experiments and simulation models andthe emitters array was fabricated by dry etching using an inductively coupled plasma (ICP) through a three-step process. Besides, in order to understand the field emission phenomenon in nano/micro scale, a novel experimental measurement technique by SEM with nanomotors including the constant voltage and the constant emission modes was developed to measure the accurate field emission properties.The results indicated that etching method is a good way to make the uniform field emitters and the electron field emission from a single nanoemitter is a barrier tunneling, quantum mechanicalprocess.

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Periodical:

Applied Mechanics and Materials (Volumes 479-480)

Pages:

264-267

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.479-480.264

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Online since:

December 2013

Authors:

Wen Shih Lin, Tao Hsing Chen, Tsung Chieh Cheng

Keywords:

Carbon Nanotube (CN), Field Emission, Silicon Nanowire

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