The Effects of Nitrogen Concentration in TiN_x and the Thickness of HfSiO_xN to the Tunneling Currents in Isotropic TiN_x/HfSiO_xN/SiO₂/Si(100) Capacitors

Abstract:

In this paper, we have computed electron tunneling currents in TiN_x/HfSiO_xN/SiO₂/Si (100) MOS capacitors by including a coupling term between transverse and longitudinal kinetic energies which is represented by an electron phase velocity in the gate. The effective mass of the substrate is considered as an isotropic mass. The transmittance was analytically calculated by employing an Airy-wavefunction approach, and the obtained transmittance was then utilized to calculate the tunneling current for different nitrogen compositions in the TiN_x metal gate and the equivalent oxide thicknesses (EOTs) of HfSiO_xN. It was shown that the tunneling current reduces considerably as the nitrogen composition of the TiN_x metal gate decreases. It was also shown that the increase in the EOT reduces the tunneling current. In addition, the tunneling current shows an oscillatory behavior at high oxide voltages.

• Periodical: Applied Mechanics and Materials (Volume 481)
• Pages: 121-124
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.481.121
• Online since: December 2013
• Authors: Fatimah A. Noor*, Mikrajuddin Abdullah, Khairurrijal Khairurrijal
• Keywords: Electron Velocity, High-κ Gate Stack, Isotropic Mass, Tunneling Current

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