Pattern Formation of Silicon Oxide Thin Film with InkMask

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Abstract:

Patterned silicon oxide films were formed by a simple process using a dimethyl-silicone-oil as source and inks as patterning masks.After the coating of the ink, the dimethyl-silicone-oil was coated onto the substrate. The sample was heated at 150oC and ozone gas was irradiated. After the heat treatment with ozone gas, patterned silicon film was formed. The circle pattern with a diameter of 20 μm wassuccessfully formed.After the formation of the patterned silicon oxide film, the silicon oxide was hardly observed at the position where the ink coated.

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98-101

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December 2013

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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