Low Temperature (~300°C) Epitaxial Growth of SiGe by Liquid-Solid Coexisting Annealing of A-GeSn/Si(100) Structure

Abstract:

To develop a new low-temperature crystallization technique, annealing characteristics of a-GeSn/Si (100) structures are investigated. It is revealed that epitaxial growth accompanying Si-Ge mixing is generated at temperatures in the liquid-solid coexisting region of the Ge-Sn system. The annealing temperature necessary for epitaxial growth is significantly decreased by increasing annealing time and/or Sn concentration. Consequently, epitaxial growth at 300°C becomes possible. These findings are expected to be useful to realize next-generation large-scale integrated circuits, where various multi-functional devices are integrated.

• Periodical: Applied Mechanics and Materials (Volume 481)
• Pages: 137-140
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.481.137
• Online since: December 2013
• Authors: Hironori Chikita*, Ryo Matsumura, T. Sadoh, M. Miyao
• Keywords: Epitaxial Growth, Ge, Liquid-Solid Coexisting Annealing, Low Temperature, Sn

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