GaN MSM UV Sensor Using Multi-Layer Graphene Schottky Electrodes

Chang Ju Lee; Hyeon Gu Cha; Seul Ki Hong; Seung Hyun Doh; Yi Sak Koo; Byung Jin Cho; Sung Ho Hahm

doi:10.4028/www.scientific.net/AMM.481.146

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 481GaN MSM UV Sensor Using Multi-Layer Graphene...

GaN MSM UV Sensor Using Multi-Layer Graphene Schottky Electrodes

Abstract:

We demonstrated a metal-semiconductor-metal type GaN UV sensor for the first time by using multi-layer graphene as a Schottky electrode. Multi-layer graphene shows good Schottky electrode characteristic and fabricated UV sensor shows good UV response characteristics. The maximum dark current density and photo-responsive current density were 6.42 × 10^-9 A/cm² and 5.57 × 10^-5 A/cm² at the 10 V bias, respectively. UV/visible rejection ratios were higher than 10³ with each applied bias from 1 V to 15 V.

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Periodical:

Applied Mechanics and Materials (Volume 481)

Pages:

146-149

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.481.146

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Online since:

December 2013

Authors:

Chang Ju Lee, Hyeon Gu Cha, Seul Ki Hong, Seung Hyun Doh, Yi Sak Koo, Byung Jin Cho, Sung Ho Hahm*

Keywords:

GaN, Graphene, Metal-Semiconductor-Metal, Transparent Electrode, UV Sensor

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