Optimization of BiFeO3MFIS Capacitors Doped Niobium by Using Taguchi Method

K.C. Lin; C.H. Ko; M.J. Twu; P.C. Juan; H. Sekiguchi; C.H. Chou

doi:10.4028/www.scientific.net/AMM.481.141

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 481Optimization of BiFeO3MFIS Capacitors Doped...

Optimization of BiFeO₃MFIS Capacitors Doped Niobium by Using Taguchi Method

Abstract:

In this study,MFIS (Metal/Ferroelectric/Insulator/Semiconductor) capacitors whose structure is Al/BFO+Nb/HfO₂/p-Si are investigatedby using Taguchi Method. The effects of leakage current, memory window, and signal-to-noise ratio (S/N ratio) are discussed by different process conditions. As a result, the leakage current and memory window indicate the better performance on th same process condition. The better conditions of this MFIS capacitoroccur in rapid thermal annealing (RTA) at 700°C, 5W direct current (DC) power of Nb sputtering and 15 of argon-to-oxygen ratio for laekage current and memory window.Oxygen vacancies were reduced bydoping niobium (Nb) that Nb ions replace ferrum (Fe) ions with RTA at 700°C. The more Nb dopesthe more Nb ions replace Fe ions. Butthe excessive Nb induces to increase the leakage current and reduce the memory widow.

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Periodical:

Applied Mechanics and Materials (Volume 481)

Pages:

141-145

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.481.141

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Online since:

December 2013

Authors:

K.C. Lin*, C.H. Ko, M.J. Twu, P.C. Juan, H. Sekiguchi, C.H. Chou

Keywords:

BiFeO₃, Memory Window, MFIS Capacitors, Taguchi Method

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