Study on Total Measuring Effect of Ionizing Irradiation of Schottky Diode

Xiao Wei Han; Guo Ding Dai

doi:10.4028/www.scientific.net/AMM.488-489.1285

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 488-489Study on Total Measuring Effect of Ionizing...

Study on Total Measuring Effect of Ionizing Irradiation of Schottky Diode

Abstract:

Ionizing radiation total measurement response of Schottky Diode were studied, Investigation result shows radiation causes decrement of breakdown reverse voltage and increment of leakage currents. More steps theoretical analysis shows radiation induced new interface state which causes performance degeneration of device, thus changes density distribution of interface state and modules Barrier Height of Schottky Diode.

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Periodical:

Applied Mechanics and Materials (Volumes 488-489)

Pages:

1285-1288

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.488-489.1285

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Cite this paper

Online since:

January 2014

Authors:

Xiao Wei Han*, Guo Ding Dai

Keywords:

Irradiation Damage, Metrology, Schottky Diode, Total Measurement Response

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References

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