Room Temperature Atomic Layer Deposition of SiO2 on Flexible Plastic Materials

Fumihiko Hirose; Kensaku Kanomata; Shigeru Kubota; Bashir Ahmmad; Kazuhiro Hirahara

doi:10.4028/www.scientific.net/AMM.490-491.118

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 490-491Room Temperature Atomic Layer Deposition of SiO2...

Room Temperature Atomic Layer Deposition of SiO₂ on Flexible Plastic Materials

Abstract:

Room-temperature SiO₂ atomic layer deposition (ALD) on soft, flexible materials of acrylic resin and polystyrene is developed using tris (dimethylamino) silane and plasma-excited water vapor. The growth rate is measured to be 0.13 nm/cycle at room temperature on the acrylic resin surface. The SiO₂ coating on the soft materials was examined by X-ray photoelectron spectroscopy and an organic solvent resistant test. This process is applicable as a surface treatment for improving chemical resistivity of the soft materials.

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Periodical:

Applied Mechanics and Materials (Volumes 490-491)

Pages:

118-122

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.490-491.118

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Online since:

January 2014

Authors:

Fumihiko Hirose, Kensaku Kanomata, Shigeru Kubota, Bashir Ahmmad, Kazuhiro Hirahara

Keywords:

Acrylic Resin, Atomic Layer Deposition, Polystyrene, Rt Growth, SiO₂

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