Effect of Partial Pressure of Precursors on Atomic Layer Deposited Zinc Oxide Films as TCO Material in Solar Cell Application

Soumyadeep Sinha; Shaibal K. Sarkar

doi:10.4028/www.scientific.net/AMM.492.341

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 492Effect of Partial Pressure of Precursors on Atomic...

Effect of Partial Pressure of Precursors on Atomic Layer Deposited Zinc Oxide Films as TCO Material in Solar Cell Application

Abstract:

Zinc Oxide (ZnO) films were deposited by Atomic Layer Deposition (ALD) using Diethylzinc and a combination of Water and Ozone as the precursores. Electrical conductivity of ALD grown ZnO films, under low field, were studied with varied partial pressure of the constituent reactants. Supressing the oxygen vacancy by introducing O₃ during the reaction increase the resistivity of the films by couple of orders of magnitude. UV-Vis spectroscopy measurement showed the films to be transparent giving a room for its application as a TCO in solar cell.

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Periodical:

Applied Mechanics and Materials (Volume 492)

Pages:

341-345

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.492.341

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Online since:

January 2014

Authors:

Soumyadeep Sinha, Shaibal K. Sarkar

Keywords:

Atomic Layer Deposition, Partial Pressure, Resistivity, Solar Cell, Transparent Conducting Oxide (TCO), X-Ray Photoelectron Spectroscopy (XPS)

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