A Novel Resurf Stepped Oxide MOSFET with Slope Field Plate

Bo Tao Sun; Li Xin Wang; Yan Fei Zhang; Li Mei Song; Wei Xiong

doi:10.4028/www.scientific.net/AMM.513-517.2616

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 513-517A Novel Resurf Stepped Oxide MOSFET with Slope...

A Novel Resurf Stepped Oxide MOSFET with Slope Field Plate

Abstract:

In this work, a new charge-coupling structure of RSO MOSFET with slope field plate is proposed. The design method is developed by theoretical analysis. In addition, a fabrication method using multi-plate to fit slope method is introduced. Then, a 250V structure was simulated to verify the theoretical analysis by TCAD. It is demonstrated that the structure overcomes the non-uniformity of electric field in drift region in traditional RSO MOSFET. The trade-off between the Ron and BV— “silicon limit” has been broken, for the Rdson=116 mΩ/mm² in this structure.

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Periodical:

Applied Mechanics and Materials (Volumes 513-517)

Pages:

2616-2619

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.513-517.2616

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Online since:

February 2014

Authors:

Bo Tao Sun*, Li Xin Wang, Yan Fei Zhang, Li Mei Song, Wei Xiong

Keywords:

Breakdown Voltage, Electric Field, RSO MOSFET, Slope Field Plate

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* - Corresponding Author

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