Electrical Characteristics of ZnTe Thermoelectric Thin Films

Abstract:

Thermal coating growth of ZnTe thermoelectric films were deposited on n-type Si substrate is studied. Structural analysis through x-ray diffraction (XRD) and scanning electron microscopy (SEM) were sensitive to the RTA treatment. The electrical properties and microstructure of these films were investigated with special emphasis on the effects of various annealing temperatures from 600°C to 800°C by RTA technique. The highest carrier concentration, lowest resistivity and mobility at an annealing temperature of 700°C are 3.5×10¹⁵ cm^-3, 0.25 Ω-cm, and 49 cm²V^-1S^-1. The resultant electrical properties have made ZnTe films as very interesting materials for thermoelectric device applications.

• Periodical: Applied Mechanics and Materials (Volume 535)
• Pages: 688-691
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.535.688
• Online since: February 2014
• Authors: Wen Shiush Chen*, Cheng Hsing Hsu, Wen Hua Kao, Yi Ting Yu, Pai Chuan Yang, Ching Fang Tseng, Chun Hung Lai, Ye Mu Lee, Hsi Wen Yang, Jenn Sen Lin
• Keywords: Electrical Properties, Thermal Evaporation, Thermoelectric, ZnTe Films

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