Characterization of Si–C Covalent Bonding Fabricated between Single Carbon Nanotube and Si Substrate

Abstract:

The SiC covalent bonding between Carbon nanotube and Si substrate was fabricated by thermal vapor deposition using photolithography and gas blowing technology. Scanning electron microscopy, micro-Raman imaging and spectroscopy were used to investigate the interaction of individual CNTs and Si substrate. The characterization results showed that covalent bonds were formed between certain CNTs and Si substrate. Moreover, the reasons for the fabrication of SiC covalent bonding between CNTs and Si substrate were also proposed.

• Periodical: Applied Mechanics and Materials (Volumes 543-547)
• Pages: 3711-3715
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.543-547.3711
• Online since: March 2014
• Authors: Xia Liu*, Lian Zhen Cao
• Keywords: Carbon Nanotube (CN), Micro-Raman Spectroscopy, SiC Covalent Bonding, Thermal Chemical Vapor Deposition

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