The Study of Morphological Structure and Raman Spectra of 3C-SiC Membranes

Abstract:

In this paper, membranes of 3C-SiC with dimensions up to 10 mm x 15 mm² have been fabricated in epitaxial 3C-SiC/ Si wafers by the means of photolithography, reactive ion etching of 3C-SiC and wet etching of Si. Scanning electron microscope (SEM) micrographs were used to observe the structure of the membrane and the wall formed by the Si wet etching. The quality of the 3C-SiC membranes were observed using Raman Spectroscopy. The remains of <111> Si substrate which was unetched during the Si wet etching were presented with the formation of microstructure defects which showed distinct peaks in comparison to the high quality 3C-SiC membranes at different position. Here, the effect of the membrane fabrication procedures to the 3C-SiC membrane properties especially the morphological structure and its Raman characteristics is discussed in detail.

• Periodical: Applied Mechanics and Materials (Volume 554)
• Pages: 66-70
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.554.66
• Online since: June 2014
• Authors: Fazli Mohd Nashrul Nasir*, Patrick W. Leech, Geoff K. Reeves, Brett C. Johnson, Philip Tanner, Anthony S. Holland
• Keywords: 3C-SiC, Membrane, Raman Spectroscopy, Reactive Ion Etching, Scanning Electron Microscopy (SEM), X-Ray Photoelectron Spectroscopy

References

[1] G. Kotzar, M. Freas, P. Abel, A. Fleischman, S. Roy, C. Zorman J.M. Moran, and J. Melzak: Biomaterials. Vol. 23, p.2737, (2002).

DOI: 10.1016/s0142-9612(02)00007-8

[2] C.A. Zorman: Silicon carbide as a material for Biomedical Microsystems, EDA Publishing, Italy, (2009).

[3] M. Mehregany, C. A Zorman, R. Rajan, C.H. Wu: Proc. IEEE. Vol 86, No. 8, p.1594, (1998).

[4] R. Cheung, in: Silicon Carbide Microelectromechanical Systems for Harsh Environments, edited by R. Cheung, Imperial College Press, London, UK, p.1, (2006).

DOI: 10.1142/p426

[5] N. Piluso, A. Severino, M. Camarda, A. Canino, A. La Magna, and F. La Via: Mater. Sci. Forum. Vol. 679, p.221, (2011).

DOI: 10.4028/www.scientific.net/msf.679-680.221

[6] J. Zhu, S. Liu and J. Liang: Thin Solid Films, Vol. 368, p.307, (2000).

[7] S. Nakashima, Y. Nakatake, Y. Ishida, T. Talkahashi and H. Okumura: Physica B, Vol. 308, p.684, (2001).

DOI: 10.1016/s0921-4526(01)00795-5

[8] L. Wang, S. Dimitrijev, J. Han, A. Iacopi, L. Hold, P. Tanner, and H. B. Harrison: Thin Solid Films. Vol. 519, p.6443, (2011).

DOI: 10.1016/j.tsf.2011.04.224

[9] N.F. Mohd Nasir, C.M. Shah, P.W. Leech, G.K. Reeves, E. Pirogova, T. Istivan, P. Tanner and A.S. Holland: International Conference on Biomedical Engineering (ICoBE). Vol, No., p.589, (2012).

DOI: 10.1109/icobe.2012.6178985

[10] N.F. Mohd Nasir, A.S. Holland, G.K. Reeves, P.W. Leech, A. Collins and P. Tanner: MRS Proceedings, 1335, mrss11-1335-o09-01, (2011).

DOI: 10.1557/opl.2011.1202

[11] C. A. Zorman and R. J. Parro: Phys. Status Solidi B, Vol. 245, p.1404, (2008).

[12] K. E. Bean: IEEE Trans. Electron Devices, Vol. 25, p.1185, (1978).

[13] S. Rohmfeld, M. Hundhausen and L. Ley: Phys. Rev. B, vol. 58, p.9858, (1998).

[14] J. Zhu, S. Liu and J. Liang: Thin Solid Films, vol. 368, p.307, (2000).

[15] Z. C. Feng, W. J. Choyke, and J. A. Powell: J. Appl. Phys., vol. 64, p.6827, (1988).