The Research on Static Characteristics of 3300V/50A Planner NPT-IGBT

Abstract:

A 3300V/50A NPT-IGBT was designed by process simulation, which had an internal transparent collector and a planner cell structure. The Static characteristics were studied. The simulation results show that the threshold voltage of the device can be adjusted by changing the injection dose of the p-well. The saturation voltage of the device can be adjusted by changing injection dose of the p-well or the internal transparent collector. This device was fabricated using a self-aligned process, the test results show that the breakdown voltage is more than 4300V, the saturation voltage is between 3.4V and 3.7V and the threshold voltage is between 5.2V and 6.5V, which are similar with the simulation results.

• Periodical: Applied Mechanics and Materials (Volumes 568-570)
• Pages: 1201-1206
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.568-570.1201
• Online since: June 2014
• Authors: Jun Liu, Hai Long Bao, Jiang Liu*, Ge Zhao, Ming Chao Gao, Rui Jin, Kun Shan Yu
• Keywords: Breakdown Voltage, Cell, IGBT, Saturation Voltage, Threshold Voltage

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