Memory and Threshold Resistance Switching in Pb0.8La0.1Ca0.1Ti0.975/Zn0.99La0.01O Heterostructure

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The heterostructural film combining ferroelectric layer Pb0.8La0.1Ca0.1Ti0.975O3 (PLCT) with semiconductor layer Zn0.99La0.01O (ZLO) was deposited between Pt electrodes by chemical solution deposition (CSD) method. The Pt/PLCT/ZLO/Pt structure device exhibits either memory or threshold resistance switching (RS) by setting the compliance current (ICC) at room temperature. The memory RS with a large ON/OFF ratio (∼104) is triggered by a high ICC, while the threshold RS appears by setting the compliance current to a relatively low value. The physical mechanisms for the memory and threshold RS are discussed and attributed to the formation of an oxygen vacancy conductive filament and the electrical field induced breakdown, respectively.

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Periodical:

Edited by:

Fangping Zhang

Pages:

89-92

Citation:

B. W. Zeng et al., "Memory and Threshold Resistance Switching in Pb0.8La0.1Ca0.1Ti0.975/Zn0.99La0.01O Heterostructure", Applied Mechanics and Materials, Vol. 628, pp. 89-92, 2014

Online since:

September 2014

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