Ballistic Effect and Application in Circuit Design of Wide Band-Gap Semiconductor

Xin Xiang Liang; Zhi Qun Cheng; Min Shi Jia

doi:10.4028/www.scientific.net/AMM.644-650.3597

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 644-650Ballistic Effect and Application in Circuit Design...

Ballistic Effect and Application in Circuit Design of Wide Band-Gap Semiconductor

Abstract:

With manufacturing technology innovation and progress of electronic devices of semiconductors, dimensions of electronic devices get smaller nowadays. There has been processing of 90nm and 20nm in production. With in-depth research, scientists are more and more interested in molecular devices. Since the size of molecular devices is small, electrons transfer by ballistic transport. In semiconductor devices, when the transport distance is at micrometer or smaller sizes, the ballistic transport phenomena of electrons and holes of carriers occur. This transfer form is not affected by lattice defects, doping, and interaction of crystal interfaces. Since there is no interference of these interactions, carrier’s velocity can be faster several times than common electronic devices, resulting in the doubled operating speed of these devices. Although it is difficult to achieve pure ballistic transport, when the size of semiconductor devices is close to the mean free path of carriers, the speed of carriers will still be greatly improved.

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Periodical:

Applied Mechanics and Materials (Volumes 644-650)

Pages:

3597-3600

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.644-650.3597

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Online since:

September 2014

Authors:

Xin Xiang Liang*, Zhi Qun Cheng, Min Shi Jia

Keywords:

Ballistic Transport, Digital Logic Circuits, Mean Free Path, Sensor

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