Preparation of Cu/ZrW₂O₈ Gradient Films Using Different Targets

Abstract:

The Cu/ZrW₂O₈ gradient films have been deposited on silicon substrates by RF magnetron sputtering with copper and compound targets followed by annealing in argon atmosphere at 750 °C for 3 min. The three different compound targets were B1 (nZrO₂:nWO₃=1:2.2), B2 (nZrO₂:nWO₃=1:2.5) and B3 (ZrW₂O₈), respectively. The as-deposited gradient films were amorphous, while a post-deposition annealing at elevated temperature was required for the development of the cubic ZrW₂O₈. The structure and surface morphology of the gradient films were then studied using X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Energy Dispersive Spectrometer (EDS). The globular and slender rod crystals can be found in annealed films, which are copper and ZrW₂O₈, respectively. The fine gradient film should be obtained using the target B1.

• Periodical: Applied Mechanics and Materials (Volumes 66-68)
• Pages: 1808-1811
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.66-68.1808
• Online since: July 2011
• Authors: Xue Yan, M. Li, Jun Li, X. Cheng
• Keywords: Copper, Gradient Film, Magnetron Sputtering, Zirconium Tungstate

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