The Research of the Structure and Performance Based on Quantum Dot Light Emitting Devices

Abstract:

The choice of materials and the design of device structure of the quantum dot light emitting diodes were investigated. The electron blocking layer or the hole injection layer was added into the fundamental structure. The results of theoretical analyses showed that the improved device structure can regulate the potential barrier height and the injection efficiency of the holes and electrons. In this way, the concentration of the holes and electrons can reach to a certain balance in the quantum dots layer, which consequently decreases the influence of the Auger quenching process and the luminous efficiency will be improved.

• Periodical: Applied Mechanics and Materials (Volumes 668-669)
• Pages: 107-111
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.668-669.107
• Online since: October 2014
• Authors: Hang Ma*, Deng Hua Li, Hui Gao
• Keywords: Device Structure, Electron Transport Layer, Hole Transport Layer, Potential Barrier, Quantum Dot Light Emitting Diodes, Tunneling Injection

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