High Permittivity and Varistor Properties of SnO₂-Zn₂SnO₄ Composite Ceramics

Abstract:

(1-x)SnO₂-xZn₂SnO₄ composite ceramics were prepared by traditional ceramic processing and the varistor, dielectric properties were investigated. With increasing Zn₂SnO₄ content, the breakdown electrical field E_B and nonlinear coefficient α reaches the minimum of 6.9 V/mm and 2.5 at x=0.206, respectively. In the dielectric spectra, the relative dielectric constant ε_r exhibits strong frequency dependent character and at 40 Hz, ε_r for the sample of x=0.206 reaches a maximum as high as 3×10⁴. In the frequency region lower than 1 kHz, accompanied by the sharp increase of dielectric loss at 40 Hz, ε_r is depressed and a dielectric peak is presented in the spectra with increasing bias voltage. In the low electrical current range of 1.37-20 μA, The barrier height φ_B about 1.0 eV are obtained and it is found that φ_B decreases with increasing measuring current for each sample. Based on the results, the varistor behavior with high dielectric constant is explained by the Schottky barriers at grain boundaries.

• Periodical: Applied Mechanics and Materials (Volumes 670-671)
• Pages: 121-126
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.670-671.121
• Online since: October 2014
• Authors: Huan Huan Liu*, Li Ben Li, Guo Zhong Zang, Jing Xiao Cao, Yong Li
• Keywords: Ceramic, Schottky Barrier, Varistors

References

[1] G. Z. Zang, J. F. Wang, H. C. Chen, W. B. Su, C. M. Wang, P. Qi: Chin. Phys. Lett. Vol. 22 (2005), p.750.

[2] Y. Nakano, N. Ichinose: J. Mater. Res. Vol. 5 (1990), p.2910.

[3] T. R. N. Kutty, S. Philip: Mat. Sci. Eng. B-solid. Vol. 33 (1995), p.58.

[4] M. F. Yan, W. W. Rhodes: Appl. Phys. Lett. Vol. 40 (1982), p.536.

[5] S. L. Yang, J. M. Wu: J. Am. Ceram. Soc. Vol. 76 (1993), p.145.

[6] P. R. Bueno, M. R. Cassia-Santos, G. P. Simões Luis, W. Gomes José, E. Longo, A. Varela José: J. Am. Ceram. Soc. Vol. 85 (2002), p.282.

[7] W. B. Su, J. F. Wang, H. C. Chen, W. X. Wang, G. Z. Zhang, C. P. Li: J. Appl. Phys. Vol. 92 (2002), p.4779.

[8] S. Y. Chung, I. D. Kim, S. J. Kang: Nat. Mater. Vol. 3, (2004), p.774.

[9] I. D. Kim, A. Rothschild, H. L. Tuller: Appl. Phys. Lett. Vol. 88, (2006), p.072902.

[10] S. Aygün, X. L. Tan, J. P. Maria, D. Cann: J. Electroceram. Vol. 15, (2005), p.203.

[11] B. Cheng, Y. H. Lin, W. Deng, J. Cai, J. Lan, C. W. Nan, X. Xiao, J. He: J. Electroceram. Vol. 29, (2012), p.250.

[12] N. Choon-W: Ceram. Int. Vol. 38, (2012), p.2593.

[13] Z. J. Shen, W. P. Chen, K. Zhu, Y. Zhuang, Y. M. Hu, Y. Wang, H. L. W. Chan: Ceram. Int. Vol. 35, (2009), p.953.

[14] G. -Z. Zang, X. -F. Wang, L. -B. Li, H. -F. Guo, Q. -D. Chen: J. Electroceram. Vol. 31 (2013), p.134.

[15] G. -Z. Zang, L. -B. Li, H. -H. Liu, X. -F. Wang, Z. -G. Gai: J. Alloy. Compd. Vol. 580 (2013), p.611.

[16] P. R. Emtage: J. Appl. Phys. Vol. 48 (1977), p.4372.

[17] G. Garcia-Belmonte, J. Bisquert, F. Fabregat-Santiago: Solid-State Electron. Vol. 43 (1999), p.2123.

[18] P. R. Bueno, M. M. Oliveira, W. K. Bacelar-Junior, E. R. Leite, E. Longo: J. Appl. Phys. Vol. 91 (2002), p.6007.