Large-Scale Growth of Nitrogen-Doped via Solvothermal Synthesis

Xian Lan Chen; Na Wu; Gao Zhang Gou; Ling Shi; Shan Qin Pan; Wei Liu

doi:10.4028/www.scientific.net/AMM.670-671.323

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 670-671Large-Scale Growth of Nitrogen-Doped via...

Large-Scale Growth of Nitrogen-Doped via Solvothermal Synthesis

Abstract:

Theoretical studies predicted that doping graphene with nitrogen can tailor its electronic properties and chemical reactivity. We develop here a novel method for synthesis N-doped graphene via solvothermal synthesis process with urea as both reductant and nitrogen sources. The resulting N-doped graphene were characterized by various methods (UV-vis spectra, SEM and XPS). XPS analysis shows a predominant graphitic C 1s peak at ca. 285 eV, an O 1s peak at ca. 532 eV and N 1s peak at ca. 410 eV. Moreover, the atomic ratio of N/C is 5.0% for N-doped graphene, demonstrating nitrogen species have been successfully incorporated into N-doped graphene.

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Periodical:

Applied Mechanics and Materials (Volumes 670-671)

Pages:

323-326

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.670-671.323

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Online since:

October 2014

Authors:

Xian Lan Chen, Na Wu, Gao Zhang Gou, Ling Shi, Shan Qin Pan, Wei Liu*

Keywords:

N-Doped Graphene, Solvothermal Synthesis, Urea, XPS Analysis

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* - Corresponding Author

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