The Effect of Water Vapor on Thermal Oxide Grown on Inconel 690

Abstract:

Nickel based alloys are well considered materials for uses in high temperature applications. Inconel 690 is the one of outstanding candidate with the superior properties. The aim of this report is to present the influence of water vapor on thermal oxide film. Inconel 690 was oxidized under dry and wet atmosphere at 900°C for 30 hours. The oxidized samples were characterized by SEM/EDS, Raman spectroscopy, and photoelectrochemical technique. The results illustrated that typical thermal oxides grown on alloy composed of Cr, Fe, Ni, in forms of Cr₂O₃, NiFe₂O₄, NiCr₂O₄, Fe₂O₃, Fe_2–xCr_xO₃ and/or solid solution of NiFe₂O₄−NiCr₂O₄. The presence of water vapor affected on oxide morphology, its stoichiometry, and also semiconducting behavior. Oxide film grown under water vapor atmosphere show the homogeneity. Water vapor promoted the predominated oxide of Cr₂O₃ with n−type semiconducting. Moreover the characterization revealed the effect of surface orientation on oxidation mechanism in case of sample which oxidized in oxygen atmosphere.

• Periodical: Applied Mechanics and Materials (Volumes 670-671)
• Pages: 74-81
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.670-671.74
• Online since: October 2014
• Authors: Anusara Srisrual*, Jean Pierre Petit, Yves Wouters, Alain Galerie
• Keywords: Inconel 690, Orientation, Photoelectrochemistry, Water Vapor

References

[1] G.C. Allen, J.M. Dyke, S.J. Harris, and A. Morris: Appl. Surf. Sci. Vol. 31 (1988), p.220.

[2] Z. Zhang, J. Wang, E. –H. Han, W. Ke: Corr. Sci. Vol. 53 (2011), p.3623.

[3] L. P. Bonfrisco, M. Frary: J. Mater. Sci. Vol. 45 (2010), p.1663.

[4] P. Xu, L.Y. Zhao, K. Sridharan, T.R. Allen: J. Nucl. Mater. Vol. 422 (2012), p.143.

[5] J. Panter, B. Viguier, J. –M. Cloué, M. Foucault, P. Combrade, E. Andrieu: J. Nucl. Mat. Vol. 348(2006), p.213.

[6] P. Xu, L.Y. Zhao, K. Sridharan, T.R. Allen: J. Nucl. Mat. Vol. 422(2012), p.143.

[7] L. Marchetti, S. Perrin, Y. Wouters, F. Martin, M. Pijolat: Electrochim. Acta Vol. 55 (2010), p.5384.

[8] K. F. McCarty and D. R. Boehme: J. Solid State Chem. Vol. 79(1989), p.19.

[9] D. Renusch, B. Veal, K. Natesan, and M. Grimsditch: Oxid. Met. Vol. 46(5/6) (1996), p.365.

DOI: 10.1007/bf01048636

[10] G. Calvarin, A.M. Huntz, A. Hugot Le Goff, S. Joiret, and M.C. Bernard: Scripta Materialia Vol. 38(11) (1998), p.1649.

DOI: 10.1016/s1359-6462(98)00079-7

[11] R. Benrabaa, H. Boukhlouf, A. Löfberg, A. Rubbens, R. –N. Vannier, E. Bordes–Richard, A. Barama:J. Natural Gas Chem. Vol. 21 (2012), p.595.

DOI: 10.1016/s1003-9953(11)60408-8

[12] P. Sivakumar, R. Ramesh, A. Ramanand, S. Ponnusamy, C. Muthamizhchelvan: Mat. Research Bulletin Vol. 46(2011), p.2204.

[13] J. H. Kim, I. S. Hwang: Nucl. Eng. & Design Vol. 235(2005), p.1029.

[14] G. J. Abraham, R. Bhambroo, V. Kain, R. Shekhar, G.K. Dey, V.S. Raja: Nucl. Eng. & Design Vol. 243(2012), p.69.

[15] Z. Wang, S.K. Saxena, P. Lazor, H.S.C. O'Neill: J. Phys. &Chem. of Solids Vol. 64(2003), p.425.

[16] J. -P. Petit, R. Boichot, A. Loucif, A. Srisrual, and Y. Wouters: Oxid. Met. Vol. 79 (2013), p.349.

DOI: 10.1007/s11085-012-9352-0

[17] F. Bergmann, M. Handschuh, W. Lorenz: Chem. Phys. Vol. 215 (1)(1997), p.157.

[18] L. P. Bonfrisco and M. Frary:J. Mat. Sci. Vol. 45 (6) (2010), p.1663.

[19] A. R. J. Kucernak, R. Peat, and D. E. Williams: J. Electrochem. Soc. Vol. 139 (8) (1992), p.2337.

[20] F. Di Quarto, S. Piazza, and C. Sunseri: Corr. Sci. Vol. 31 (1990), p.721.

[21] Y. Wouters, A. Galerie, J–P. Petit: Mat. Sci. Forum Vol. 595–598(2008), p.1181.

[22] C. -S. Chang, H. Gomi, H. Sakata: Phys. Stat. Sol. (a) Vol. 155 (1996), p.417.

[23] A. Srisrual, S. Coindeau, A. Galerie, J. –P. Petit, Y. Wouters: Corr. Sci. Vol. 51 (2009), p.562.