A Design of Three-Input Low-Power AND/XOR Complex Gate

Chun Lei Huang; Lun Yao Wang; Hao Liang; Yin Shui Xia

doi:10.4028/www.scientific.net/AMM.687-691.3149

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 687-691A Design of Three-Input Low-Power AND/XOR Complex...

A Design of Three-Input Low-Power AND/XOR Complex Gate

Abstract:

For the deficiencies of the existing complex circuit designs, a novel transistor-level three-input AND/XOR logic complex gate with simple and symmetry structure is proposed. HPSICE simulation results show that the proposed circuit has correct operation. Further, in 55nm process CMOS technology, compared with the conventional cell-based cascaded AND/XOR circuit at different operation frequencies, the proposed circuit has a significant improvement at delay, power consumption and power delay product (PDP).

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Periodical:

Applied Mechanics and Materials (Volumes 687-691)

Pages:

3149-3152

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.687-691.3149

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Online since:

November 2014

Authors:

Chun Lei Huang, Lun Yao Wang*, Hao Liang, Yin Shui Xia

Keywords:

AND/XOR, Complex Gate, Low Power, PDP

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* - Corresponding Author

References

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