Research on Modeling Methods of Power Amplifier with Memory Effect in Broadband Communication

Article Preview

Abstract:

Memory effect of power amplifier (PA) due to broadband signals which adopt new modulation technique is becoming obvious, and worsening the linearity of PA. Behavioral modeling for RF (Radio Frequency) power amplifier is indispensable to design digital pre-distortion system by which we can promote the efficiency of PA. According to the simulation data in the software of ADS (Advanced Design System), behavioral models of MRF21085 amplifier can be established by MATLAB. Comparison of memory polynomial model and ADS simulation of MRF21085 amplifier demonstrate memory polynomial model can represent the electric characteristic of it exactly.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

4060-4063

Citation:

Online since:

November 2014

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2014 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] Cripps S C. Advanced techniques in RF power amplifier design[M]. Artech House, 2002, 111-256.

Google Scholar

[2] Liu T, Boumaiza S, Sesay A B, et al. Quantitative measurements of memory effects in wideband RF power amplifiers driven by modulated signals[J]. Microwave and Wireless Components Letters, IEEE, 2007, 17(1): 79-81.

DOI: 10.1109/lmwc.2006.887286

Google Scholar

[3] Kent M, Erceg V, Landau U M, et al. Method and system for channel estimation in a single channel MIMO system with multiple RF chains for WCDMA/HSDPA: U.S. Patent 8, 416, 896[P]. 2013-4-9.

Google Scholar

[4] Younes M, Hammi O, Kwan A, et al. An accurate complexity-reduced PLUME, model for behavioral modeling and digital predistortion of RF power amplifiers[J]. Industrial Electronics, IEEE Transactions on, 2011, 58(4): 1397-1405.

DOI: 10.1109/tie.2010.2049717

Google Scholar

[5] He Z, Ye W, Feng S. Digital predistortion of power amplifiers based on compound memory polynomial model[J]. IEICE Electronics Express, 2013, 10(21): 20130687-20130687.

DOI: 10.1587/elex.10.20130687

Google Scholar