Development of Self-Aligned Process to Decrease Gate Length in Recessed SiC SIT

Gang Chen; Song Bai; Lin Wang; Yong Hong Tao; Hai Qi Liu

doi:10.4028/www.scientific.net/AMM.687-691.4372

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 687-691Development of Self-Aligned Process to Decrease...

Development of Self-Aligned Process to Decrease Gate Length in Recessed SiC SIT

Abstract:

Because of difficulty in deep ion implantation, the recessed gate structure has been favored in SiC SIT. In order to improve the frequency, it is a good method to decrease the gate length by eliminating the side wall ion implantation affection. We developed normally-on RF 4H-SiC SIT with high small signal gain. The effect of forming the side wall protection between the source mesa and the gate area was simulated

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Periodical:

Applied Mechanics and Materials (Volumes 687-691)

Pages:

4372-4375

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.687-691.4372

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Online since:

November 2014

Authors:

Gang Chen, Song Bai, Lin Wang, Yong Hong Tao, Hai Qi Liu

Keywords:

Recess, RF, Self-Aligned, SiC SIT

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