The Effect of Thermal Resistans on I_C-V_BE Fly-Back Characteristic of Power SiGe Heterojunction Bipolar Transistor

Abstract:

The effect of thermal resistans on I_C-V_BE fly-back characteristic of power SiGe heterojunction bipolar transistor is studied through theoretical analysis, computer simulations, and experimental measurements. It is found that a suitable thermal resistans can make the collector current achieve the second fly-back point before transistors are burned-out, and then returns to a stable situation. Such a thermal resistans is beneficial to the thermal stability. When the thermal resistans is small, the curve of I_C-V_BE fly-back characteristic of HBT has no fly-back point. While the thermal resistans increases, the curve of I_C-V_BE fly-back characteristic of HBT has two fly-back points.

• Periodical: Applied Mechanics and Materials (Volumes 701-702)
• Pages: 1177-1180
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.701-702.1177
• Online since: December 2014
• Authors: Liang Chen*
• Keywords: Fly-Back Characteristic, SiGe HBTs, Thermal Resistans

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