Preparation and Characterization of Hot Wall Deposited CuInGaSe2 Thin Films for Solar Cell Applications

S. Arul; N. Muthukumarasamy; M.D. Kannan; S. Jayakumar

doi:10.4028/www.scientific.net/AMM.705.56

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 705Preparation and Characterization of Hot Wall...

Preparation and Characterization of Hot Wall Deposited CuInGaSe₂ Thin Films for Solar Cell Applications

Abstract:

CuIn_0.7Ga_0.3Se₂ (CIGS) bulk compound was prepared by direct reaction of high purity (99.99%) elemental copper, indium, gallium and selenium. Using the prepared bulk CIGS, polycrystalline CuInGaSe2 thin films were deposited onto well cleaned soda-lime glass substrates using hot wall deposition technique by optimizing process parameters such as the wall temperature, filament current and time of deposition. The x-ray diffraction studies on the as-prepared films revealed polycrystalline nature. The composition of the chemical constituents present in the prepared bulk and thin films has been determined using energy dispersive X-ray analysis (EDX). The surface morphology of CIGS thin film of deposition time 3 min. have been carried out using Atomic Force Microscopy (AFM). The AFM images revealed that the average grain size was 20 nm and the surface roughness was about 8 nm. Transmittance spectra in the wavelength range of 190 nm to 2500 nm was obtained using a double beam spectrophotometer (UV-VIS) and the results are discussed.

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Periodical:

Applied Mechanics and Materials (Volume 705)

Pages:

56-59

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.705.56

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Online since:

December 2014

Authors:

S. Arul*, N. Muthukumarasamy, M.D. Kannan, S. Jayakumar

Keywords:

CIGS, Cu-Chalcopyrite, CuInGaSe₂, Direct Melting Method, Hot Wall Deposition, Low Cost Absorber Layer

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