Design and Thermal Analysis of SiGe HBT with Non-Uniform Segmented Emitter Fingers and Non-Uniform Emitter Finger Spacing

Liang Chen

doi:10.4028/www.scientific.net/AMM.713-715.938

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 713-715Design and Thermal Analysis of SiGe HBT with...

Design and Thermal Analysis of SiGe HBT with Non-Uniform Segmented Emitter Fingers and Non-Uniform Emitter Finger Spacing

Abstract:

A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with non-uniform segmented emitter fingers and non-uniform emitter finger spacing was proposed to improve the thermal stability. Thermal simulation for a five-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with non-uniform segmented emitter fingers structure and non-uniform emitter finger spacing structure, the maximum junction temperature of novel structure reduce significantly, the thermal resistance reduce, temperature distribution were significantly improved. Thermal stability was effective enhanced.

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Periodical:

Applied Mechanics and Materials (Volumes 713-715)

Pages:

938-941

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.713-715.938

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Online since:

January 2015

Authors:

Liang Chen*

Keywords:

HBT, Segmented Emitter Fingers, Thermal Coupling Effects

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* - Corresponding Author

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