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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 754-755Raman Scattering Characterization of MoxW1-xS2...

Raman Scattering Characterization of Mo_xW_1-xS₂ Layered Mixed Crystals

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Abstract:

A systematic study of a series of Mo_xW_1-xS₂ layered mixed crystals, with 0 ≥ x ≤ 1, grown by the chemical vapor transport method were carried out by using Raman scattering measurements. The peaks of the two dominant first-order Raman-active modes, A_1g and E2g1 , and several second-order bands have been observed in the range of 150-500 cm^-1. The peaks corresponding to A_1g mode show one-mode type behavior while the peaks of E2g1 mode demonstrate two-mode type behavior for the entire series. The results can be explained on the basis of the atomic displacements for each mode. For A_1g mode only sulfur atoms vibrate and this give rise to a one-mode type behavior for the mixed crystals. For E2g1 mode metal atoms also vibrate as well as sulfur atoms, the mass difference of the vibrating Mo and W cations causes the two-mode type behavior of E2g1 mode. In addition, the observation of largest asymmetry and broadening of A_1g mode for Mo_0.5W_0.5S₂ has been attributed to random alloy scattering.

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Advanced Materials Engineering and Technology III

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Periodical:

Applied Mechanics and Materials (Volumes 754-755)

Pages:

595-601

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https://doi.org/10.4028/www.scientific.net/AMM.754-755.595

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Online since:

April 2015

Authors:

M.N. Nasruddin*, Mula Sigiro, Muhammad Ridwan Fahmi

Keywords:

Atomic Displacement, Chemical-Vapor Transport Method, Layered Mixed Crystal, Raman-Active Mode

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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